Qualcomm Snapdragon 835 Announced With Samsung 10nm FinFET Technology And Quick Charge 4.0

Qualcomm has announced its upcoming system on a chip will be called the Snapdragon 835. The chip will include the 10nm FinFET technology created by Samsung.

Keith Kressin, Qualcomm’s senior vice president of product management and Ben Suh, Samsung Electronics senior vice president, showcased the chip at the Qualcomm Snapdragon Technology Summit Wednesday.

Samsung announced in October it would be mass producing a SoC with its 10nm FinFET technology for the first time. At that time, the manufacturer did not reveal that it was partnering with Qualcomm. Samsung perfected the technology in 2014, which boasts 30 percent greater area efficiency, 27 percent greater performance and 40 percent lower power consumption than the 14nm chips, such as the Samsung Exynos 7420 found in the Galaxy S6 and S6 Edge.

The Snapdragon 835 will also include Qualcomm’s latest generation of fast charging technology, Quick Charge 4.0. The standard is intended to support USB Type-C and USB-PD ports and can add up to five hours of power to a device in a five minute charge. Users can charge their devices up to 50 percent in 15 minutes.

Overall, the technology provides 20 percent faster charging and 30 percent higher efficiency compared to the previous Quick Charge 3.0 standard. Qualcomm has stated the technology includes an updated power management system and safety features, which measure and control voltage, current and temperature to protect battery, system, cables and connectors during charging.

Devices featuring the Qualcomm Snapdragon 835 chip are expected to ship in early 2017.